MNC 2018, November 13-16, 2018
31st International Microprocesses and Nanotechnology Conference
Sapporo Park Hotel, Sapporo, Japan

Plenary Speakers Name
Dr. Kirsten E. Moselund
IBM Research Zurich;

Paper Title
Materials Innovation and Integration for New Computing Paradigms
Scaling has long since ceased to be sufficient to support the performance improvements expected from the next generation technology. In this talk, I will address some of the new trends in exploratory materials development for beyond Moore applications. In particular, I will focus on topics such as the monolithic and heterogeneous integration of III-V's for photonics and high-performance electronics. At IBM we have developed a technique referred to as Template-Assisted-Selective-Epitaxy (TASE), where we grow III-V confined within hollow oxide cavities. The template guides the growth and allows for the integration of vertical and lateral nanowires as well as arbitrarily shaped nanostructures. In terms of devices we have demonstrated high performance III-V MOSFETs and complementary tunnel FETs, as well as GaAs and InGaAs micro-disk lasers. Finally, material properties as well as nanoscale thermal characterization of III-V nanowire and CNT devices will also be discussed. Using a scanning thermal probe technique we are able to resolve the thermal response at the nm-scale during device operation.
Short Biography
Kirsten Emilie Moselund received the M.Sc. degree in engineering from the Technical University of Denmark in 2003 and the Ph.D. degree in microelectronics from the Swiss Federal Institute of Technology in Lausanne (EPFL), Lausanne, Switzerland, in 2008. In 2008, she joined the IBM Zurich – Research, where she is currently managing the Materials Integration and Nanoscale Devices group, which among other things focuses on III-V on silicon integration for new electronic devices for ultra-low power electronics as well as for active nanophotonics, in particular on their experimental demonstration in the BRNC Nanotechnology Center. Her research interests include nanofabrication technology, semiconductor physics, nanophotonics and novel electronic and photonic device concepts.

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