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MNC 2015, November 10-13, 2015
28th International Microprocesses and Nanotechnology Conference
Toyama International Conference Center, Toyama, Japan |
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November 11, 2015
 Jos Benschop (ASML, The Netherlands) |
| EUV Lithography, status and prospects |
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Abstract
Moore’s Law dictates that every 18 months the number of transistors on
an integrated circuit doubles. This is first and foremost enabled by optical
lithography printing ever smaller transistors.
After a short introduction into IC making and the role of lithography,
Extreme Ultra Violet lithography will be discussed.
EUV lithography has come a long way since first publications mid 1980’s.
ASML has shipped its first full field NA=0.25 scanners in 2006, followed by six
NA=0.25 pre-production tools since end 2010. Currently the 3rd generation full
field scanner having an NA=0.33 is being shipped.
Latest results obtained with NA=0.33 systems will be shared. Opportunities
and challenges of tool roadmap, as well as mask and resist roadmaps, will
be discussed. Finally it will be discussed how EUV can be extended to future
nodes by a combination of illuminator optimization, multiple patterning
and high NA.
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Short Biography
Jos Benschop received his MSc (cum laude) and PhD from physics faculty
in Twente University. From 1984 until 1997 he worked at Philips on optical
metrology and optical recording. He joined ASML in 1997.
As Senior Vice President Technology he is responsible for the definition
and execution of research/advanced-development program which is executed
internal ASML and with an extensive network of international partners.
Furthermore he is responsible for System Engineering which includes system
specification and design as well as system integration and testing.
He has published 27 papers and generated 18 patents. He is an SPIE fellow
and part-time professor “Industrial Physics” at the University of Twente.
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| Masaaki Nishijo (Ministry of Education, Culture, Sports, Science and Technology, Japan) |
| Trends of Nanotechnology for Society |
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Abstract
Nano-technology plays an important role as a care technology that forms the
basis of the manufacturing industry, because it is essential to design and
process devices and materials as Nano-level to create new materials that possess
new functionality and develop new parts that can be applied to a wide range of
fields, today.
From this viewpoint, MEXT has promoted some R&D projects such as
“Elements Strategy Initiative” to create cutting edge technology in the material
science felid and also formulated research platforms/hubs related
Nano-technology, as common basis to support R&D activities nationwide.
The present global position of our country’s research in the field of
Nano-technology and material is advantageous. However, it is possible that Japan
will gradually lose competitiveness in these areas, considering the tendency of
global competition in manufacturing and total optimization as a system.
Considering such situation, now, the discussion for next S&T basic
plan, which will be published by end of this year, going on, and in this
discussion, Nano-technology is one of the key technologies because it is
strongly demanded that Nano-technology will be source of the country’s
industrial competitiveness in future, as a core technology that is essential to
create future industry and society.
In my presentation, I will explain about current policy discussion in
Japanese government, especially focus on Nano-technology and material science
and also MEXT’s activities to promote R&D in the field of Nano-technology
and material science.
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Short Biography
Mr. NISHIJO has responsible for the planning strategy and promoting of
material science and nanotechnology development on MEXT. Before he is appointed
to current position, He had served as the director for cross-ministerial
strategic innovation promotion program (SIP), which has been initiated
as new R&D national program to promote innovation in 2014, in Cabinet
office. He has extensive experience in science and technology policy and
governance, in various field, such as space, nuclear and so on. He joined
Science and Technology Agency, which was the predecessor of MEXT, in 1993.
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| Dmitri B. Strukov (UC Santa Barbara, USA) |
| Memory Technologies for Bio-Inspired Computing |
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Abstract
Synapses, the most numerous elements of neural networks, are memory devices. Similarly to traditional memory applications, device density is one of the most essential metrics for large-scale artificial neural networks. This application, however, imposes a number of additional requirements, such as the continuous change of the memory state, so that novel engineering approaches are required. In the first part of my talk, I will discuss my group’s recent efforts at addressing these needs. I start by reviewing hybrid CMOS/memristor circuits, in particular of CMOL variety, which were conceived to address major challenges of artificial neural networks. I then discuss the recent progress toward such circuit implementations, focusing on the experimental results for simple networks with crossbar-integrated memristive metal oxide devices. Next, I discuss preliminary results on redesigning commercial-grade embedded NOR flash memories to implement deep-learning convolutional neural networks. While NOR flash memories are less dense then memristor crossbars, their technology is much more mature and ready for the development of large-scale neural networks. |
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Short Biography
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Dmitri Strukov is an associate professor in the Department of Electrical
and Computer Engineering at the University of California, Santa Barbara (UCSB).
He received MS in applied physics and mathematics from the Moscow Institute of
Physics and Technology in 1999 and a PhD in electrical engineering from Stony
Brook University in New York in 2006. His main focus now is on various aspects
of hybrid nanoelectronic systems, utilizing novel resistive switching
("memristive") device, for applications in digital memories, programmable logic,
and neuromorphic networks. Prior to joining UCSB he worked as a postdoctoral
associate at Hewlett Packard Laboratories from 2007 to 2009.
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