{"id":650,"date":"2021-06-17T16:26:12","date_gmt":"2021-06-17T07:26:12","guid":{"rendered":"http:\/\/imnc.jp\/2021\/?page_id=650"},"modified":"2021-10-25T11:49:56","modified_gmt":"2021-10-25T02:49:56","slug":"symposium-b","status":"publish","type":"page","link":"http:\/\/imnc.jp\/2021\/symposium-b\/","title":{"rendered":"Symposium B"},"content":{"rendered":"

Forefront of Low-Dimensional Nanomaterials for Future Applications
\nOrganizers: Daiyu Kondo (Fujitsu) and Atsushi Ando (AIST)
\n<\/span><\/strong><\/span>Low dimensional nanomaterials including graphene, carbon nanotubes, fullerene, and TMDCs have attracted a great deal of public and academic attentions due to their own characteristic structures and\/or physical properties for last few decades. Here, we select the front of the research of these materials for \u00a0future applications as a focus area. In this symposium, the latest achievements on low dimensional materials will be\u00a0 introduced by five invited speakers.
\n\n\n\n\n\t\n\n\t\n\t\n\t\n\t\n\t
Session Time<\/th>Name, Affiliation, Paper Title and Short Biography<\/th>\n<\/tr>\n<\/thead>\n
27C-3-1\t
\n15:30
\n<\/td>		Dr. Takashi Taniguchi, NIMS, Japan<\/strong>
\nImpurity control of hexagonal Boron Nitride Crystals obtained by flux growth process
\n\"\"
\nTakashi Taniguchi is Fellow and Director of International Center for Materials Nanoarchitectonics (MANA) of National Institute for Materials Science, Tsukuba Japan. He received his PhD from Tokyo Institute of technology in 1987. His current research interests concern materials synthesis under high pressure and high temperature by using belt-type high pressure apparatus. Especially studies for boron nitride crystals as superhard and wideband gap materials are major topics in his research activity.<\/td>\n<\/tr>\n
27C-3-2\t
\n16:00
\n<\/td>		Prof. Kosuke Nagashio, The Univ. of Tokyo,
\nJapan<\/strong>
\nRoom temperature in-plane ferroelectricity in SnS
\n\"\"
\nKosuke Nagashio received the B.E. degree in Materials Science & Engineering from Kyoto University in 1997 and the M.E. and Ph.D. degrees in Materials Engineering from The University of Tokyo in 1999 and 2002, respectively. From 2002 to 2003, he was a postdoctoral research fellow at Stanford University, California. He is currently a Professor with the Department of Materials Engineering, The University of Tokyo. His research interests presently focus on the carrier transport in 2D materials and the crystal growth of 2D materials. Dr. Nagashio is a member of the Japan Society of Applied Physics (JSAP), the Materials Research Society (MRS), the IEEE Electron Device Society (EDS) and the American Physics Society (APS).<\/td>\n<\/tr>\n
27C-3-3\t
\n16:30
\n<\/td>		Dr. Kazuhito Tsukagoshi, NIMS, Japan<\/strong>
\nC60-Nanowire Two-State Resistance Switching
\n\"\"
\nKazuhito Tsukagoshi studied experimental research on transport physics in semiconductor microstructure and completed his PhD (Osaka University) in 1995. After that he worked as a visiting associate in Cavendish laboratory (University of Cambridge, U.K.) and then in Hitachi Cambridge Laboratory (Hitachi Europe Ltd, U.K.). In 1999, he joined RIKEN where he carried out research on functional thin-film electronics. He continued this research in AIST in 2008, and moved to NIMS in 2009. His current research focuses on nano-material applications for nano-electronics.<\/td>\n<\/tr>\n
27C-3-4\t
\n17:00
\n<\/td>		Prof. Yutaka Ohno, Nagoya Univ., Jpaan <\/strong>
\nCARBON NANOTUBE TECHNOLOGIES FOR FLEXIBLE ELECTRONICS
\n\"\"
\n
\nYutaka Ohno is a professor of Center for Integrated Research of Future Electronics, Nagoya University, Japan. He received Ph. D from Nagoya University in 2000. He became an assistant professor in 2000, an associate professor in 2008, and a professor in 2015 at Nagoya University. He also served as a visiting professor at Aalto University, Finland from 2012 to 2013 and as a visiting professor of Kyoto University in 2015. He is currently involved in the research of electronics applications of carbon nanotubes and two-dimensional materials.<\/td>\n<\/tr>\n
27C-3-5\t
\n17:30
\n<\/td>		Prof. Stephan Hofmann, Univ. of Cambridge, UK <\/strong>
\nOn the Fundamental Mechanisms that underpin Process Technology for Atomically Thin 2D Films
\n\"\"
\nStephan Hofmann is Professor of Nanotechnology at the Department of Engineering at Cambridge University, and Director of the NanoDTC Doctoral Training Centre in Nanotechnology (www.nanodtc.cam.ac.uk). His research group (hofmann-group.eng.cam.ac.uk) works on the application driven exploration of new device materials, bridging from fundamental discovery and characterisation of properties to functional device integration and manufacturing pathways. He graduated in Physics at the Technische Universita\u0308t Mu\u0308nchen and obtained his Ph.D. at the University of Cambridge. Prior to his faculty position, he held a Dorothy Hodgkin Fellowship by the Royal Society and a Research Fellowship at Peterhouse, Cambridge, where he is currently a Fellow.
\n
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